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NTMS4404N Power MOSFET
30 V, 12 A, Single N-Channel, SO-8
Features
* High Density Power MOSFET with Ultra Low RDS(on) for Higher * * * * * * *
Efficiency Miniature SO-8 Surface Mount Package Saving Board Space IDSS Specified at Elevated Temperature Diode Exhibits High Speed, Soft Recovery
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V(BR)DSS 30 V
RDS(on) TYP 9.7 mW @ 10 V 15.5 mW @ 4.5 V
ID MAX 12 A
Applications
Power Management for Battery Power Products Portable Products Computers, Printers, PCMCIA Cards Cell Phones, Cordless Telephones
N-Channel
D
MAXIMUM RATINGS (TJ = 25C unless otherwise stated)
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State tp v10 s Power Dissipation (Note 1) Continuous Drain Current (Note 2) Power Dissipation (Note 2) Pulsed Drain Current TA = 25C TA = 70C TA = 25C PD ID PD IDM TJ, TSTG IS EAS Symbol VDSS VGS ID Value 30 $20 9.6 7.6 12 1.56 2.5 7.0 5.6 0.83 50 -55 to 150 6.0 500 W A C A mJ A
1
Unit V V A
G
S
MARKING DIAGRAM/ PIN ASSIGNMENT
W Source Source Source Gate 1 E4404N LYWW 8 Drain Drain Drain Drain
Steady State tp v10 s Steady State TA = 25C TA = 70C TA = 25C tp = 10 ms, DC = 2 %
SO-8 CASE 751 STYLE 12
Top View E4404N = Device Code L = Assembly Location Y = Year WW = Work Week
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain-to-Source Avalanche Energy (VDD = 20 V, VGS = 5 V, IPK = 7.25 A, L = 19 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8" from case for 10 s)
ORDERING INFORMATION
Device Package SO-8 Shipping 2500/Tape & Reel
TL
260
C
NTMS4404NR2
THERMAL RESISTANCE RATINGS
Parameter Junction-to-Ambient - Steady State (Note 1) Junction-to-Ambient - t = 1 0 s (Note 1) Junction-to-Ambient - Steady State (Note 2) Symbol RqJA RqJA RqJA Max 80 50 150 Unit C/W
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces) 2. Surface-mounted on FR4 board using the minimum recommended pad size (Cu area = 0.412 in sq.)
(c) Semiconductor Components Industries, LLC, 2003
1
November, 2003 - Rev. 1
Publication Order Number: NTMS4404N/D
NTMS4404N
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified)
Parameter OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Drain-to-Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current V(BR)DSS V(BR)DSS/ TJ IDSS VGS = 0 V VDS = 30 V V, TJ = 25C TJ = 100C VGS = 0 V, ID = 250 mA 30 25 1.0 5.0 $100 nA V mV/C mA Symbol Test Condition Min Typ Max Units
Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Gate Threshold Temperature Coefficient Drain-to-Source On Resistance
IGSS
VDS = 0 V, VGS = $20 V
VGS(TH) VGS(TH)/TJ RDS(on) ()
VGS = VDS, ID = 250 mA
1.0
2.2 -5.0
3.0
V mV/C
VGS = 10 V, ID = 12 A VGS = 4.5 V, ID = 6.0 A
9.7 15.5 17.5
11.5 17.5
mW
Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate-to-Source Charge Gate-to-Drain Charge
gFS
VDS = 15 V, ID = 12 A
S
CISS COSS CRSS QG(TOT) QG(TH) QGS QGD VGS = 10 V VDS = 24 V ID = 12 A V, V, VGS = 0 V, f = 1 MHz, VDS = 24 V , ,
1975 575 180 50 2.4 7.5 16
2500 750 300 70
pF
nC
SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 10 V, VDS = 24 V, ID = 12 A, RG = 2.5 W 15 25 35 15 25 50 55 30 ns
SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 4) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 24 V, ID = 6.0 A, RG = 2.5 W 20 80 25 15 ns
DRAIN-SOURCE DIODE CHARACTERISTICS (Note 4) Forward Diode Voltage VSD VGS = 0 V IS = 6 0 A V, 6.0 TJ = 25C TJ = 125C 0.80 0.65 40 VGS = 0 V, dISD/dt = 100 A/ms, IS = 6.0 A 23 17 0.05 mC 55 ns 1.1 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
tRR ta tb QRR
NOTES: 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures.
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2
NTMS4404N
TYPICAL PERFORMANCE CURVES
24 ID, DRAIN CURRENT (AMPS) 20 TJ = 25C 16 12 3.6 V 8 4 0 0 2 4 6 8 10 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 3.4 V 3.2 V 3.0 V 0 2 3.8 V VGS = 10 V to 4.2 V 24 4V ID, DRAIN CURRENT (AMPS) 20 16 12 TJ = 25C 8 4 TJ = 100C TJ = -55C 4 3 5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 6 VDS 10 V
Figure 1. On-Region Characteristics
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 0.05 ID = 12 A TJ = 25C 0.025
Figure 2. Transfer Characteristics
TJ = 25C 0.02 VGS = 4.5 V 0.015 VGS = 10 V
0.04
0.03
0.02
0.01
0.01 0 2 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 10
0.005 0 6 8 10 12 14 16 18 20 22 24 ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage
1.6 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) ID = 12 A VGS = 10 V 1.4 IDSS, LEAKAGE (A) 1000 10000
Figure 4. On-Resistance vs. Drain Current and Gate Voltage
VGS = 0 V TJ = 150C
1.2
1
100 TJ = 100C
0.8 0.6 -50 10 -25 0 25 50 75 100 125 150 5 10
15
20
25
30
TJ, JUNCTION TEMPERATURE (C)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 5. On-Resistance Variation with Temperature
Figure 6. Drain-to-Source Leakage Current vs. Voltage
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NTMS4404N
TYPICAL PERFORMANCE CURVES
VDS = 0 V C, CAPACITANCE (pF) 4000 Ciss VGS = 0 V VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 5000 15 QT VDS 30 VDS , DRAIN-TO-SOURCE VOLTAGE (VOLTS)
TJ = 25C
10 VGS 5 QGS QGD ID = 12 A TJ = 25C 0 0 30 10 20 40 QG, TOTAL GATE CHARGE (nC)
20
3000 C rss 2000 Ciss
10
1000 0 10 5 VGS 0 VDS 5 10 15 20 25 Coss Crss 30
0 50
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
1000 IS, SOURCE CURRENT (AMPS) VDD = 24 V ID = 12 A VGS = 10 V t, TIME (ns) 100 td(off) tf tr td(on) 10 12 10 8 6 4 2
Figure 8. Gate-To-Source and Drain-To-Source Voltage vs. Total Charge
VGS = 0 V TJ = 25C
1
1
10 RG, GATE RESISTANCE (OHMS)
100
0 0.5
0.7 0.6 0.8 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
0.9
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
100 ID, DRAIN CURRENT (AMPS) 10 ms 10 dc 1 VGS = 10 V SINGLE PULSE TC = 25C RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 1 ms
Figure 10. Diode Forward Voltage vs. Current
100 ms
0.1
0.01
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased Safe Operating Area
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4
NTMS4404N
1000 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE DUTY CYCLE 100 MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
D = 0.5 0.2 0.1 0.05 0.02 0.01 P(pk) t2 DUTY CYCLE, D = t1/t2 1E-03 1E-02 1E-01 t, TIME (seconds) 1E+00 t1
10
1 SINGLE PULSE 0.1 1E-05 1E-04
RJA(t) = r(t) RJA D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TA = P(pk) RJA(t) 1E+02 1E+03
1E+01
Figure 12. Thermal Response - Various Duty Cycles
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5
NTMS4404N
PACKAGE DIMENSIONS
SOIC-8 NB CASE 751-07 ISSUE AA
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751-01 THRU 751-06 ARE OBSOLETE. NEW STANDARD IS 751-07. MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0_ 8_ 0.010 0.020 0.228 0.244
-X- A
8 5
B
1 4
S
0.25 (0.010)
M
Y
M
-Y- G C -Z- H D 0.25 (0.010)
M SEATING PLANE
K
N
X 45 _
0.10 (0.004)
M
J
ZY
S
X
S
DIM A B C D G H J K M N S
STYLE 12: PIN 1. 2. 3. 4. 5. 6. 7. 8.
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NTMS4404N/D

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